1.5 [micro sign]m wavelength DBR lasers consisting of 3/4-semiconductor and 3/4-groove buried with benzocyclobutene
1.5 [micro sign]m wavelength DBR lasers consisting of 3/4-semiconductor and 3/4-groove buried with benzocyclobutene
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1.5 [microsign]m 波长 DBR 激光器，由埋有苯并环丁烯的 3/4 半导体和 3/4 槽组成
DOI：
10.1049/el:19990907
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发表时间：
1999
影响因子：
1.1
通讯作者：
S. Arai
中科院分区：
文献类型：
--
作者：
M. M. Raj;J. Wiedmann;Y. Saka;H. Yasumoto;S. Arai
1.5μm波长GaInAsP/InP激光器已实现高反射率深腐蚀DBR。将苯并环丁烯（BCB）聚合物埋入DBR沟槽中，从而与使用空气/半导体沟槽获得的衍射损耗相比降低了衍射损耗。通过测量阈值电流对腔长的依赖性以及前后腔面的输出功率比，估计反射率为90%。
1.5 µm wavelength GaInAsP/InP lasers with high reflectivity deeply etched DBR have been realised. Benzocyclobutene (BCB) polymer was buried in DBR grooves thus reducing the diffraction loss compared to that obtained using air/semiconductor grooves. The reflectivity was estimated to be 90% from the measurement of the threshold current dependence on the cavity length and the output power ratio from the front to the rear facets.