(Invited) How to Achieve Low Thermal Resistance and High Electrothermal Ruggedness in Ga 2 O 3 Devices?
(Invited) How to Achieve Low Thermal Resistance and High Electrothermal Ruggedness in Ga 2 O 3 Devices?
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（特邀）如何在Ga 2 O 3 器件中实现低热阻和高电热耐用性？
DOI：
10.1149/10405.0021ecst
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Buttay, Cyril
中科院分区：
文献类型：
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作者：
Zhang, Yuhao;Wang, Boyan;Xiao, Ming;Spencer, Joseph;Zhang, Ruizhe;Knoll, Jack;DiMarino, Christina;Lu, Guo-Quan;Sasaki, Kohei;Buttay, Cyril
超宽带隙氧化镓 (Ga2O3) 器件最近已成为电力和射频电子器件的有前途的候选器件。 Ga2O3 的低热导率可以说是这些设备最严重的问题。尽管进行了许多模拟研究，但仍然缺乏大面积封装 Ga2O3 器件的热阻和电热耐用性的实验报告。最近，我们的团队首次展示了具有不同封装配置的大面积Ga2O3器件，并测量了这些封装Ga2O3器件的热阻和浪涌电流能力。本文回顾了我们努力的主要成果。结果表明，与一些普遍的看法相反，采用适当封装的 Ga2O3 器件可以在短瞬态和稳态下实现高热性能。双面封装的 Ga2O3 肖特基整流器的结壳热阻低于类似额定值的商用 SiC 肖特基整流器。此外，与 SiC 整流器相比，这些 Ga2O3 整流器可以承受更高的峰值浪涌电流。这些卓越性能的关键因素是直接结冷却，并且通过 Ga2O3 芯片的热量最少。我们的工作证明了 Ga2O3 器件在高功率应用中的可行性，并表明了封装对其芯片级热管理的重要性。
Ultra-wide bandgap gallium oxide (Ga2O3) devices have recently emerged as promising candidates for power and RF electronics. The low thermal conductivity of Ga2O3 has arguably been the most serious concern for these devices. Despite many simulation studies, there still lacks an experimental report on the thermal resistance and electrothermal ruggedness of a large-area, packaged Ga2O3 device. Recently, our team for the first time demonstrated largearea Ga2O3 devices with different packaging configurations and measured the thermal resistance and surge current capabilities of these packaged Ga2O3 devices. This paper reviews the key results in our efforts. It is shown that, contrary to some popular belief, Ga2O3 devices with proper packaging can achieve high thermal performance in both short transients and the steady state. The double-side-packaged Ga2O3 Schottky rectifiers show a junctionto-case thermal resistance lower than that of the similarly-rated commercial SiC Schottky rectifiers. In addition, these Ga2O3 rectifiers can survive a higher peak surge current as compared to SiC rectifiers. The critical enabler for these excellent performances is the direct junction cooling with minimal heat going through the Ga2O3 chip. Our work proves the viability of Ga2O3 devices for high power applications and manifests the significance of packaging for their die-level thermal management.