Low-resistance contacts of electroless-plated metals with high-mobility organic semiconductors: novel organic field-effect transistors with solution-processed electrodes
Low-resistance contacts of electroless-plated metals with high-mobility organic semiconductors: novel organic field-effect transistors with solution-processed electrodes
复制标题
化学镀金属与高迁移率有机半导体的低电阻接触：具有溶液处理电极的新型有机场效应晶体管
DOI：
10.1016/j.orgel.2015.08.025
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发表时间：
2015
影响因子：
3.2
通讯作者：
J. Takeya
中科院分区：
文献类型：
--
作者：
M.Ito;M. Uno;J. Takeya
由于溶液可加工的高迁移率有机场效应晶体管(OFET)的发展迅速，建立一种可靠的无真空方法在高性能有机半导体上形成电接触已成为一项紧迫的任务。我们最近提出，化学镀是一种在目前商业化的电子设备中批量生产布线的标准技术，适用于高性能的溶液结晶OFET。有机半导体在源极和漏极的低接触电阻是高速器件运行所必需的，因此，我们使用传输线方法评估了接触电阻。采用具有足够接触面积的顶部接触几何结构来实现稳定的载流子注入，这使得在栅极电压为10Ω10 V的情况下，聚乙烯萘酸酯基板上的接触电阻低至1.4K−5 cm，这标志着在已报道的用于OFET的溶液处理金属电极中，特别是在塑料基板上，具有优异的性能。结果表明，由于常温下化学镀工艺条件温和，可获得陷阱密度最小的高质量晶界。
The establishment of a reliable vacuum-free method for the formation of electrical contacts on high-performance organic semiconductors has become an urgent task due to rapid progress made in the development of solution-processable high-mobility organic field-effect transistors (OFETs). We have recently proposed that electroless plating, a standard technology to mass produce wirings in currently commercialized electronic devices, is suited for high-performance solution-crystallized OFETs. A low contact resistance at the source and drain electrodes is necessary with organic semiconductors for high-speed device operation; therefore, we have evaluated the contact resistance using the transfer line method. A top-contact geometry with sufficient contact area is employed to achieve stable carrier injection, which has enabled contact resistances as low as 1.4 kΩ cm on a polyethylene naphthalate substrate at a gate voltage of −10 V. This marks outstanding performance among the solution-processed metal electrodes reported for OFETs, particularly on plastic substrates. The result indicates that high-quality boundaries with minimized trap densities are realized due to the mild conditions of the electroless plating process at room temperature.