FEMTOSECOND STUDIES OF COHERENT TRANSIENTS IN SEMICONDUCTORS
FEMTOSECOND STUDIES OF COHERENT TRANSIENTS IN SEMICONDUCTORS
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DOI：
10.1103/physrevlett.59.2588
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发表时间：
1987-11-30
影响因子：
8.6
通讯作者：
ANTONETTI, A
中科院分区：
文献类型：
--
作者：
FLUEGEL, B;PEYGHAMBARIAN, N;ANTONETTI, A
从实验和理论上研究了飞秒激光脉冲与CdSe和GaAs薄样品的相干相互作用。当探针脉冲先于泵时，在激子共振周围和泵频率周围的差分探针传输中观察到振荡结构。与理论比较将振荡归因于半导体中光场与电子-空穴跃迁之间的相干耦合。对于非共振激发，激子周围的振荡结构被确定为光学斯塔克效应的早期阶段。
The coherent interaction of femtosecond laser pulses and thin CdSe and GaAs samples is investigated experimentally and theoretically. Oscillatory structures in the differential probe transmission around the exciton resonance and around the pump frequency are observed when the probe pulse precedes the pump. Comparison with theory attributes the oscillations to the coherent coupling between the light field and the electron-hole transitions in the semiconductor. For nonresonant excitation, the oscillatory structures around the exciton are identified as the early stages of the optical Stark effect.