Reducing Trap States in Printed Indium Zinc Oxide Transistors by Doping with Benzyl Viologen
Reducing Trap States in Printed Indium Zinc Oxide Transistors by Doping with Benzyl Viologen
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DOI：
10.1002/aelm.201700631
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发表时间：
2018-05
影响因子：
6.2
通讯作者：
Hyonwoong Kim;T. Ng
中科院分区：
文献类型：
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作者：
Hyonwoong Kim;T. Ng
采用一种空气稳定、强还原分子苄基紫素（BV）诱导了喷墨印刷薄膜晶体管中铟锌氧化物半导体的电荷转移掺杂。BV处理后，器件的迁移率从未掺杂时的5.8±1.4 cm2 V−1 s−1提高到8.7±1.0 cm2 V−1 s−1。通过测量频率相关的导纳和电容，这项工作量化了界面态的密度，并表明与未掺杂的器件相比，掺BV晶体管的界面陷阱密度降低了四倍。
An air‐stable, strongly reducing molecule benzyl viologen (BV) is used to induce charge‐transfer doping of the indium zinc oxide semiconductor in inkjet‐printed thin‐film transistors. The device mobility is improved from 5.8 ± 1.4 cm2 V−1 s−1 in the undoped devices and reached up to 8.7 ± 1.0 cm2 V−1 s−1 after BV treatment. Through measurement of frequency‐dependent admittance and capacitance, this work quantifies the density of interface states and shows that interfacial trap density is four times lower in the BV‐doped transistors compared to undoped devices.