keV particle bombardment of semiconductors: A molecular-dynamics simulation.
keV particle bombardment of semiconductors: A molecular-dynamics simulation.
复制标题
半导体的 keV 粒子轰击：分子动力学模拟。
DOI：
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发表时间：
1989
期刊：
影响因子：
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通讯作者：
Garrison
中科院分区：
文献类型：
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作者：
Smith;Harrison;Garrison
用Tersoff发展的多体势对keV粒子轰击Si/l brace/110/r brace/和Si/l brace/100/r brace/进行了分子动力学模拟。能量和角度分布沿着与重要的弹射机构的分析。我们已经开发了一种计算机逻辑，它只集成了被撞击原子的运动方程，因此从一个完整的分子动力学模拟中减少了3倍的计算机时间。
Molecular-dynamics simulations have been performed for the keV particlebombardment of Si/l brace/110/r brace/ and Si/l brace/100/r brace/ using a many-body potential developed byTersoff. Energy and angle distributions are presented along with an analysis ofthe important ejection mechanisms. We have developed a computer logic that onlyintegrates the equations of motion of the atoms that are struck, thusdecreasing the computer time by a factor of 3 from a completemolecular-dynamics simulation.