CoFe2O4/buffer layer ultrathin heterostructures on Si(001)
CoFe2O4/buffer layer ultrathin heterostructures on Si(001)
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DOI：
10.1063/1.3651386
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发表时间：
2011-10-15
影响因子：
3.2
通讯作者：
Sanchez, F.
中科院分区：
文献类型：
--
作者：
Bachelet, R.;de Coux, P.;Sanchez, F.
采用脉冲激光沉积方法，在超薄氧化钇稳定氧化锆（YSZ）层缓冲的Si（001）上，单次生长出了铁磁CoFe2O4 （CFO）外延膜。利用反射高能电子衍射对YSZ的结晶过程进行实时监测，制备了厚度约为2 nm的外延YSZ缓冲材料。随后沉积了厚度在2-50 nm范围内的CFO薄膜。CFO膜的磁化强度接近体积值。超薄CFO/YSZ异质结构具有非常平坦的形貌（0.1 nm粗糙度）和薄的界面SiOx层（约2 nm厚），使其适合集成在隧道（如自旋注入）器件中。(C) 2011年美国物理研究所。(doi: 10.1063/1.3651386)
Epitaxial films of ferromagnetic CoFe2O4 (CFO) were grown by pulsed laser deposition on Si(001) buffered with ultrathin yttria-stabilized zirconia (YSZ) layers in a single process. Reflection high-energy electron diffraction was used to monitor in real time the crystallization of YSZ, allowing the fabrication of epitaxial YSZ buffers with thickness of about 2 nm. CFO films, with thicknesses in the 2-50 nm range were subsequently deposited. The magnetization of the CFO films is close to the bulk value. The ultrathin CFO/YSZ heterostructures have very flat morphology (0.1 nm roughness) and thin interfacial SiOx layer (about 2 nm thick) making them suitable for integration in tunnel (e. g., spin injection) devices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3651386]