Optical properties of CVD grown amorphous Ge-Sb-S thin films
Optical properties of CVD grown amorphous Ge-Sb-S thin films
复制标题
DOI：
10.1016/j.jnoncrysol.2009.12.027
复制
发表时间：
2010-02-15
影响因子：
3.5
通讯作者：
Hewak, D. W.
中科院分区：
文献类型：
--
作者：
Huang, C. C.;Wu, C. C.;Hewak, D. W.
用化学气相沉积法在玻璃衬底上制备了硫化锗锑（Ge-Sb-S）非晶薄膜。这些薄膜的组成和厚度已被表征的显微拉曼，扫描电子显微镜（SEM）和能量色散X射线分析（EDX）技术。用紫外-可见-近红外光谱仪测量了薄膜的透射光谱，并采用Swanepoel方法研究了CVD生长的Ge-Sb-S非晶薄膜的光学性质。这些薄膜的光学带隙计算从Tauc的外推程序。这些膜的折射率的分散体也已使用Wemple-DiDomenico方法确定。(C)2010 Elsevier B. V.保留所有权利。
Germanium antimony sulphide (Ge-Sb-S) amorphous thin films have been fabricated on commercial glass substrates by chemical vapour deposition (CVD). The compositions and thicknesses of these thin films have been characterized by micro-Raman, scanning electron microscope (SEM) and energy dispersive X-ray analysis (EDX) techniques. Optical transmission spectra measured by UV-VIS-NIR spectrometer have been used to determine the optical properties of these CVD-grown Ge-Sb-S amorphous thin films with Swanepoel's methods. Optical band gaps of these films were calculated from Tauc's extrapolation procedure. The dispersions of the refractive indices of these films have also been determined using the Wemple-DiDomenico method. (C) 2010 Elsevier B.V. All rights reserved.