Generation of picosecond far-infrared pulses using laser-activated semiconductor reflection switches
Generation of picosecond far-infrared pulses using laser-activated semiconductor reflection switches
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使用激光激活半导体反射开关产生皮秒远红外脉冲
DOI：
10.1117/12.262736
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
M. Sherwin
中科院分区：
文献类型：
--
作者：
F. Hegmann;M. Sherwin
UCSB自由电子激光研究中心已经开发出一种高强度的皮秒至纳秒远红外脉冲源。UCSB自由电子激光器的微秒长的远红外输出使用激光激活的半导体反射开关切成较短的脉冲。我们已经观察到脉冲持续时间短至20 ps在22 cm-1。脉冲限幅器系统的设计和性能的概述。
A source of high-intensity, picosecond-to-nanosecond far-IR pulses has been developed at the UCSB Center for Free- Electron Laser Studies. The microsecond-long, far-IR output of the UCSB free-electron laser is sliced into shorter pulses using laser-activated semiconductor reflection switches. We have observed pulse durations as short as 20 ps at 22 cm-1. An overview of the design and performance of the pulse-slicer system is given.