Metal–insulator–semiconductor electrostatics of carbon nanotubes
Metal–insulator–semiconductor electrostatics of carbon nanotubes
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DOI：
10.1063/1.1502188
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发表时间：
2002-08
影响因子：
4
通讯作者：
Jing Guo;S. Goasguen;Mark S. Lundstrom;S. Datta
中科院分区：
文献类型：
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作者：
Jing Guo;S. Goasguen;Mark S. Lundstrom;S. Datta
从理论上研究了碳纳米管金属-绝缘体-半导体电容器。对于平面绝缘体上密集排列的纳米管阵列，由于相邻纳米管对栅极平面上的电荷的屏蔽，每个管的电容减小。与硅金属氧化物半导体电容器相比，计算的C-V曲线反映了纳米管中一维态密度的局部峰值。这种效应为利用C-V测量来诊断纳米管的电子结构提供了可能。静电计算的结果也可以应用于估计碳纳米管场效应晶体管的上限导通电流。
Carbon nanotube metal–insulator–semiconductor capacitors are examined theoretically. For the densely packed array of nanotubes on a planar insulator, the capacitance per tube is reduced due to the screening of the charge on the gate plane by the neighboring nanotubes. In contrast to the silicon metal–oxide–semiconductor capacitors, the calculated C–V curves reflect the local peaks of the one-dimensional density-of-states in the nanotube. This effect provides the possibility to use C–V measurements to diagnose the electronic structures of nanotubes. Results of the electrostatic calculations can also be applied to estimate the upper-limit on-current of carbon nanotube field-effect transistors.