Synthesis and Surface Acoustic Wave Property of Aluminum Nitride Thin Films Fabricated on Silicon and Diamond Substrates Using the Sputtering Method
Synthesis and Surface Acoustic Wave Property of Aluminum Nitride Thin Films Fabricated on Silicon and Diamond Substrates Using the Sputtering Method
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溅射法在硅和金刚石基片上制备氮化铝薄膜及其表面声波性能
DOI：
10.1143/jjap.40.5065
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发表时间：
2001
影响因子：
1.5
通讯作者：
Y. Koga
中科院分区：
文献类型：
--
作者：
M. Ishihara;T. Manabe;T. Kumagai;Takako Nakamura;S. Fujiwara;Y. Ebata;S. Shikata;H. Nakahata;A. Hachigo;Y. Koga
采用直流反应磁控溅射法在金刚石衬底上制备了厚度为1 μm的C轴取向氮化铝（AlN）薄膜。AlN薄膜的平均表面粗糙度（Ra）小于2 nm，通过将金刚石衬底定位在距铝靶100 mm的位置处获得。X射线衍射分析表明，AlN（002）峰的半高宽（FWHM）约为0.2°。通过在氮化铝表面沉积铝电极，实现了声表面波结构。研究了叉指换能器（IDT）/AlN/金刚石结构的声表面波特性。相速度和耦合系数分别为10、120 m/s和0.3%。
C-axis oriented aluminum nitride (AlN) thin films with a thickness of 1 µm were prepared by reactive DC magnetron sputtering on polycrystalline diamond substrates at a substrate temperature of 623 K. The average surface roughness (Ra) of the AlN thin films was less than 2 nm obtained by locating the diamond substrates at a position of 100 mm from the aluminum target. The full width at half maximum (FWHM) of the rocking curve for the AlN(002) peak determined by X-ray diffraction analysis was about 0.2°. The surface acoustic wave (SAW) structures were completed by the deposition of aluminum electrodes on the as-deposited AlN surfaces. The SAW characteristics of an interdigital transducer (IDT)/AlN/diamond structure were investigated. The phase velocity and coupling coefficient were 10,120 m/s and 0.3%, respectively.