Hydrogen diffusion in silicon from PECVD silicon nitride
Hydrogen diffusion in silicon from PECVD silicon nitride
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PECVD 氮化硅中氢在硅中的扩散
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
S. Asher
中科院分区：
文献类型：
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作者：
M. Sheoran;Dong Seop Kim;A. Rohatgi;H. Dekkers;G. Beaucarne;M. Young;S. Asher
在氢化非晶氮化硅（SiNx：H）膜的退火期间释放的氢（H）扩散通过晶体硅并钝化缺陷。这项研究表明，稳定的氢同位素氘（D），这是在退火过程中释放的氘化非晶氮化硅（SiNx：D）薄膜，扩散通过晶体硅，随后被捕获的薄，高度缺陷的非晶硅层（a-Si）溅射在背面。我们报告的“渗透”氘（氢）的浓度的测量，通过二次离子质谱（西姆斯）监测D扩散通过无缺陷的单晶硅晶片的流量。随着退火时间的延长，陷阱层中的D渗透量增加。然而，从SiNx层注入到硅中的D的通量随着退火时间的增加而减小。在快速热处理（RTP）系统中，在750 °C的退火温度下，D可以在短至1秒的峰值退火时间内穿透575 μm厚的晶片。对缺陷Si的寿命测量表明，短RTP退火期间较高的H通量对于增强Si中缺陷的氢化至关重要。
Hydrogen (H) released during the annealing of hydrogenated amorphous silicon nitride (SiNx:H) films diffuses through the crystalline silicon and passivates the defects. This study shows that the stable H isotope deuterium (D), which is released during the annealing of deuterated amorphous silicon nitride (SiNx:D) films, diffuses through the crystalline silicon and is subsequently captured by a thin, highly defective amorphous layer of silicon (a-Si) sputtered on the rear surface. We report on the measurement of the concentration of “penetrated” deuterium (hydrogen), by secondary ion mass spectrometry (SIMS) to monitor the flux of D diffusing through a defect-free single-crystalline silicon wafer. The penetrated D content in the trapping layer increases with the annealing time. However, the flux of D injected into the silicon from the SiNx layer decreases as annealing time increases. At an annealing temperature of 750 °C, D was found to penetrate through a 575 μm thick wafer in as little as 1 second peak annealing time in a Rapid Thermal Processing (RTP) system. Lifetime measurements on defective Si show that higher flux of H during the short RTP anneal is crucial for enhanced hydrogenation of the defects in Si.