InP Hot Electron Transistors with a Buried Metal Gate
InP Hot Electron Transistors with a Buried Metal Gate
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DOI：
10.1143/jjap.42.7221
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发表时间：
2003-12
影响因子：
1.5
通讯作者：
Y. Miyamoto;R. Yamamoto;H. Maeda;K. Takeuchi;N. Machida;L. Wernersson;K. Furuya
中科院分区：
文献类型：
--
作者：
Y. Miyamoto;R. Yamamoto;H. Maeda;K. Takeuchi;N. Machida;L. Wernersson;K. Furuya
为了利用超热电子的弹道特性，本文报道了一种具有埋层金属的InP超热电子晶体管（BM-HET）。在该器件中，载流子通过源自嵌入式金属光栅的吸引电势从发射极提取，并且它们仅通过本征半导体材料传播。简单的估计显示了高截止频率和低输出电导。估计的最高截止频率约为1 THz。制作的器件表明，集电极电流增加与栅极偏置。提取的泄漏电流后，一个明确的饱和集电极电流的共发射极特性被证实和BM-HET作为高速电子器件的候选人的可能性被证明。
To apply the ballistic nature of hot electrons, an InP hot electron transistor with a buried metal (BM-HET) is reported. In this device, carriers are extracted from the emitter by an attractive potential originating from an embedded metal grating, and they propagate through intrinsic semiconductor material only. A simple estimation shows a high cutoff frequency and low output conductance. The estimated highest cutoff frequency is approximately 1 THz. Fabricated devices show that the collector current increased with the gate bias. After extraction of the leakage current, a clear saturation of the collector current in common-emitter characteristics was confirmed and the possibility of BM-HET as a candidate for high-speed electron devices was demonstrated.