Ga‐polar GaN film grown by MOVPE on cleaved ScAlMgO4 (0001) substrate with millimeter‐scale wide terraces
Ga‐polar GaN film grown by MOVPE on cleaved ScAlMgO4 (0001) substrate with millimeter‐scale wide terraces
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DOI：
10.1002/pssa.201600754
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发表时间：
2017-09
期刊：
影响因子：
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通讯作者：
T. Iwabuchi;S. Kuboya;T. Tanikawa;T. Hanada;R. Katayama;T. Fukuda;T. Matsuoka
中科院分区：
文献类型：
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作者：
T. Iwabuchi;S. Kuboya;T. Tanikawa;T. Hanada;R. Katayama;T. Fukuda;T. Matsuoka
将与GaN具有1.8%的小晶格失配的切割的ScAlMgO4（SCAM）衬底用于GaN的金属有机气相外延（MOVPE）生长。在解理衬底上生长的GaN单晶薄膜表面平整，薄膜没有剥落，这与在ZnO衬底上生长的GaN单晶薄膜的晶格失配非常小不同。薄膜的极性被证明是Ga极性，并提出了一个界面模型的基础上最高的表面结构的分裂SCAM。研究了衬底清洁和生长条件对GaN表面形貌、与衬底的晶体取向关系、穿透位错密度、小残余应变和小背景载流子密度的影响。为了讨论残余应变，还测量了SCAM的热膨胀系数。
Cleaved ScAlMgO4 (SCAM) substrates with small lattice mismatch of 1.8% to GaN were used for metalorganic vapor phase epitaxial (MOVPE) growth of GaN. A single crystalline GaN film with a flat surface was obtained on a cleaved substrate without peeling off of the film, which is contrast to the growth on ZnO substrate with comparably small lattice mismatch to GaN. Polarity of the film was proven to be Ga polarity and an interface model was proposed based on the topmost surface structure of the cleaved SCAM. The effect of substrate‐cleaning and growth conditions on the surface morphology, crystallographic orientation relationship with the substrate, threading dislocation densities, small residual strains, and small background carrier density of GaN have been studied. To discuss the residual strains, thermal expansion coefficient of SCAM has also been measured.