Quantum spin/valley Hall effect and topological insulator phase transitions in silicene
Quantum spin/valley Hall effect and topological insulator phase transitions in silicene
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DOI：
10.1063/1.4803084
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发表时间：
2012-06
影响因子：
4
通讯作者：
M. Tahir;A. Manchon;K. Sabeeh;U. Schwingenschlögl
中科院分区：
文献类型：
--
作者：
M. Tahir;A. Manchon;K. Sabeeh;U. Schwingenschlögl
我们提出了在硅中量子自旋和量子谷霍尔效应的理论实现。我们证明了电场和本征自旋轨道相互作用的结合导致了电荷中性点的量子相变。这种从二维拓扑绝缘体到普通绝缘体的相变伴随着量子自旋霍尔效应的猝灭和量子谷霍尔效应的开始，为实验调整硅烯的拓扑状态提供了工具。与石墨烯和其他传统的拓扑绝缘体相比，硅烯中提出的效应可以通过实验获得。
We present a theoretical realization of quantum spin and quantum valley Hall effects in silicene. We show that combination of an electric field and intrinsic spin-orbit interaction leads to quantum phase transitions at the charge neutrality point. This phase transition from a two dimensional topological insulator to a trivial insulating state is accompanied by a quenching of the quantum spin Hall effect and the onset of a quantum valley Hall effect, providing a tool to experimentally tune the topological state of silicene. In contrast to graphene and other conventional topological insulators, the proposed effects in silicene are accessible to experiments.