Influence of annealing temperature on the magnetic properties of Cr+ implanted AlN thin films
Influence of annealing temperature on the magnetic properties of Cr+ implanted AlN thin films
复制标题
退火温度对Cr注入AlN薄膜磁性能的影响
DOI：
10.1016/j.jmmm.2014.12.032
复制
发表时间：
2015
影响因子：
2.7
通讯作者：
I. Shakir
中科院分区：
文献类型：
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作者：
A. Shah;A. Mahmood;Z. Ali;T. Ashraf;I. Ahmed;M. Mehmood;R. Rashid;I. Shakir
在室温下向AlN薄膜中注入不同剂量的铬离子，然后进行热处理，制备了稀磁半导体(DMS)AlN：Cr薄膜。利用卢瑟福背散射和沟道能谱(RBS/C)、X射线衍射(XRD)、拉曼光谱、振动样品磁强计(VSM)和SQUID等手段研究了样品的结构和磁性随退火温度的变化规律。结构分析表明，注入损伤随退火温度的升高而逐渐减小。此外，在950℃下热处理的样品在注入部分有较好的再结晶，X射线衍射和拉曼光谱表明，所有样品都没有出现第二相或金属相关峰。磁性分析表明，注入Cr+的样品在室温下表现出铁磁性，而在950℃下退火的样品表现出更好的磁特性。样品的饱和磁化强度为9.0×10−5emu/g，矫顽场Hc约为200kOe。在SQUID分析中，FC/ZFC测量表明居里温度(TC)远高于室温。
Diluted magnetic semiconductor (DMS) AlN:Cr films were produced by implanting various doses Cr+ions into AlN thin films at room temperature followed by a thermal annealing process. The structural and magnetic characteristics of the samples were investigated as a function of annealing temperature by means of Rutherford backscattering and channeling spectrometry (RBS/C), X-ray diffraction (XRD), Raman spectroscopy, vibrating sample magnetometer (VSM) and SQUID. Structural analyzes demonstrate that implantation damages gradually decrease with the increasing of annealing temperature. Moreover, better recrystallization in the implanted part of the samples was observed for the sample annealed at 950 °C. Both XRD and Raman pattern illustrate that no secondary phase or metal related-peaks were appear in all the samples. Magnetic analysis reveals that annealed Cr+-implanted samples exhibit ferromagnetism at room temperature, however, the sample annealed at 950 °C shows improved magnetic characteristics. The saturation magnetization is estimated to be 9.0×10−5emu/g and the coercive field (Hc) is approximately 200 Oe for the samples annealed 950 °C. In SQUID analysis, FC/ZFC measurements indicate that the Curie temperature (TC) is well above room temperature.
DOI：
--
发表时间：
2007
期刊：
影响因子：
--
作者：
M. Kanehara;T. Teranishi et al.;H.Qiu;S. Maekawa
通讯作者：
S. Maekawa