Exploring SiSn as a performance enhancing semiconductor: A theoretical and experimental approach
Exploring SiSn as a performance enhancing semiconductor: A theoretical and experimental approach
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DOI：
10.1063/1.4904056
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发表时间：
2014-12
影响因子：
3.2
通讯作者：
A. Hussain;Nirpendra Singh;H. Fahad;K. Rader;U. Schwingenschlögl;M. Hussain
中科院分区：
文献类型：
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作者：
A. Hussain;Nirpendra Singh;H. Fahad;K. Rader;U. Schwingenschlögl;M. Hussain
我们提出了一种新型半导体合金硅锡（SiSn），作为互补金属氧化物半导体（CMOS）电路应用的沟道材料。使用第一原理分析对该材料进行了理论研究，并通过制造 MOSFET 进行了实验。我们的研究表明，该合金在硅带隙调节领域提供了有趣的可能性。我们探索了将锡 (Sn) 扩散到业界最广泛使用的基板硅 (100) 中，因为这是获取 SiSn 的最具成本效益、可扩展且 CMOS 兼容的方法。我们的理论模型预测，由于空穴的有效质量较低，p 沟道 SiSn MOSFET 具有较高的迁移率，这已使用制造的 MOSFET 进行了实验验证。我们报告称，与硅控制器件相比，SiSn 器件的平均场效应空穴迁移率增加了 13.6%。
We present a novel semiconducting alloy, silicon-tin (SiSn), as channel material for complementary metal oxide semiconductor (CMOS) circuit applications. The material has been studied theoretically using first principles analysis as well as experimentally by fabricating MOSFETs. Our study suggests that the alloy offers interesting possibilities in the realm of silicon band gap tuning. We have explored diffusion of tin (Sn) into the industry's most widely used substrate, silicon (100), as it is the most cost effective, scalable and CMOS compatible way of obtaining SiSn. Our theoretical model predicts a higher mobility for p-channel SiSn MOSFETs, due to a lower effective mass of the holes, which has been experimentally validated using the fabricated MOSFETs. We report an increase of 13.6% in the average field effect hole mobility for SiSn devices compared to silicon control devices.