Optical Characterization of Silicon Carbide Polytypes
Optical Characterization of Silicon Carbide Polytypes
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DOI：
10.1002/1521-396x(199707)162:1
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发表时间：
1997-07
期刊：
影响因子：
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通讯作者：
R. Devaty;W. J. Choyke
中科院分区：
文献类型：
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作者：
R. Devaty;W. J. Choyke
本文综述了近几年来对碳化硅的几种重要多晶型：3C、4H、6H和15R的光学性质的研究进展。我们专注于实验工作，但也将实验结果与理论进行比较。重点是：1.真空紫外光反射率，2.自由激子，3.浅施主和受主的光谱，4.碳化硅中的杂质硼，5.碳化硅中的稀土杂质铒，6.多孔碳化硅的光学性质。
This article is a review of recent progress in our understanding of the optical properties of the important polytypes of SiC : 3C, 4H, 6H, and 15R. We focus on experimental work but also compare results obtained by experiment with theory. The topics of emphasis are: 1. vacuum ultraviolet reflectivity, 2. free excitons, 3. spectroscopy of shallow donors and acceptors, 4. the impurity boron in SiC, 5. the rare earth impurity erbium in SiC, and 6. optical properties of porous SiC.