Newly developed SmCo5 thin film with perpendicular magnetic anisotropy
Newly developed SmCo5 thin film with perpendicular magnetic anisotropy
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DOI：
10.1088/0022-3727/37/1/l01
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发表时间：
2004-01
期刊：
影响因子：
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通讯作者：
J. Sayama;T. Asahi;K. Mizutani;T. Osaka
中科院分区：
文献类型：
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作者：
J. Sayama;T. Asahi;K. Mizutani;T. Osaka
制备了具有垂直磁各向异性的溅射沉积SmCo5薄膜。Sm吗?Co薄膜，由[Co (0.41？海里)/ Sm (0.31 ?在Cu (100？Nm)/玻璃基板在不同基板温度下。发现矫顽力在325?345？C，在垂直于膜表面的方向上比在膜平面上大得多。利用平面内x射线衍射法测定了Sm？在325?345？C来源于SmCo5相，膜在垂直于膜表面的方向上表现出C轴的优先取向。在合适的衬底温度下沉积在Cu种子层上的Co/Sm层状结构是促进SmCo5结晶的关键，其c轴垂直于薄膜表面。
A sputter-deposited SmCo5 thin film with perpendicular magnetic anisotropy has been developed. The Sm?Co film, composed of [Co (0.41?nm)/Sm (0.31?nm)]35, was prepared by sputtering on a Cu (100?nm)/glass substrate at various substrate temperatures. The coercivity was found to increase rapidly at 325?345?C and to be much greater in the direction perpendicular to the film surface than in the film plane. By using in-plane x-ray diffractometry, reflection peaks of the Sm?Co film deposited at 325?345?C were confirmed to originate from the SmCo5 phase, and the film showed a preferred orientation of the c-axis in the direction perpendicular to the film surface. The Co/Sm laminate structure deposited on the Cu seedlayer at an appropriate substrate temperature was found to be the key to promoting crystallization of the SmCo5 with its c-axis oriented perpendicular to the film surface.