Silicon photo-multiplier radiation hardness tests with a beam controlled neutron source
Silicon photo-multiplier radiation hardness tests with a beam controlled neutron source
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DOI：
10.1016/j.nima.2010.07.057
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发表时间：
2010-02
影响因子：
1.4
通讯作者：
M. Angelone;M. Pillon;R. Faccini;D. Pinci;W. Baldini;R. Calabrese;G. Cibinetto;A. C. Ramusino;R. Malaguti;M. Pozzati
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文献类型：
--
作者：
M. Angelone;M. Pillon;R. Faccini;D. Pinci;W. Baldini;R. Calabrese;G. Cibinetto;A. C. Ramusino;R. Malaguti;M. Pozzati
在Frascati中子发生器上对硅光电倍增器进行了辐射硬度测试，该光电倍增器由硅衬底上的雪崩光电二极管方阵构建的半导体光子探测器制成。来自不同制造商的几个样品已被辐照，每平方厘米累积高达7×10101 MeV当量中子。探测器的性能记录在中子辐照过程中，并开始逐步恶化后，其属性的顺序为1081-MeV当量中子每平方厘米的积分通量达到。
Radiation hardness tests were performed at the Frascati Neutron Generator on silicon Photo-Multipliers that were made of semiconductor photon detectors built from a square matrix of avalanche photo-diodes on a silicon substrate. Several samples from different manufacturers have been irradiated, integrating up to 7×10101-MeV-equivalent neutrons per cm2. Detector performance was recorded during the neutron irradiation, and a gradual deterioration of their properties began after an integrated fluence of the order of 1081-MeV-equivalent neutrons per cm2was reached.