A theoretical model of the formation morphologies of porous silicon
A theoretical model of the formation morphologies of porous silicon
复制标题
多孔硅形成形貌的理论模型
DOI：
10.1007/bf02652104
复制
发表时间：
1988
影响因子：
2.1
通讯作者：
S. Collins
中科院分区：
文献类型：
--
作者：
Rosemary L Smith;S. Chuang;S. Collins
本文提出了一个描述多孔硅形成机理和形貌的定性理论模型。该模型是基于维滕和桑德斯的扩散限制聚集模型。该模型的有效性进行了验证，通过执行小规模的计算机模拟，以构建各种多孔硅结构。这些结构进行了比较，与已知的体硅和多孔硅的形态的属性。该模型的假设是足够丰富的，以解释孔密度，孔径，孔隙率以及晶体学蚀刻选择性和电解抛光之间的关系。
In this paper a qualitative theoretical model describing the mechanism and formation morphology of porous silicon is presented. The model is based on the diffusion limited aggregation models of Witten and Sanders. The validity of this model is verified by performing small scale computer simulations to construct various porous silicon structures. These structures are compared with the known properties of bulk silicon and morphologies of porous silicon. The postulates of the model are sufficiently rich to explain the relationship between pore density, pore diameter, porosity as well as crystallographic etch selectivity and electropolishing.