Sensitizing properties of luminescence centers on the emission of Er3+ in Si-rich SiO2 film
Sensitizing properties of luminescence centers on the emission of Er3+ in Si-rich SiO2 film
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DOI：
10.1063/1.4952751
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发表时间：
2016-05
影响因子：
3.2
通讯作者：
Qianyu Fu;Yuhan Gao;Dongsheng Li;Deren Yang
中科院分区：
文献类型：
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作者：
Qianyu Fu;Yuhan Gao;Dongsheng Li;Deren Yang
本文报道了用电子束蒸发法制备的掺铒富硅SiO2 （SRO）薄膜中Er3+的发光中心（LC）介导激发随退火温度的变化规律。研究发现，退火温度对掺铒SRO薄膜中Er3+的发射和特定的光活性点缺陷（LCs）有显著影响。当退火温度低于1100℃时，退火过程中微观结构演化产生的不同发光中心成为薄膜中Er3+的有效敏化剂。此外，LCs与Er3+之间能量耦合的温度依赖性表明了声子介导的有效能量转移过程。另外，当退火温度达到1100℃时，由于Er的聚集导致的可活化铒离子密度降低将对Er3+的发射产生不利影响。结果表明，通过优化LCs的密度和Er3+与LCs之间的耦合，可以设计合适的退火工艺来有效地增强Er3+离子的发射。
In this paper, we report on the luminescence-center (LC)-mediated excitation of Er3+ as a function of annealing temperature in Er-doped Si-rich SiO2 (SRO) films fabricated by electron beam evaporation. It is found that the annealing temperature has significant effects on the emission of Er3+ and the specific optical-active point-defects called LCs within Er-doped SRO films. Different luminescence centers generated by the evolution of microstructures during annealing process act as efficient sensitizers for Er3+ in the films when the annealing temperature is below 1100 °C. Moreover, the temperature dependence of the energy coupling between LCs and Er3+ demonstrates the effective phonon-mediated energy transfer process. In addition, when the annealing temperature reaches 1100 °C, the decreased density of activable erbium ions induced by the aggregation of Er will bring detrimental effects on the emission of Er3+. It is demonstrated that an appropriate annealing process can be designed to achieve efficiently enhanced emissions from Er3+ ions by optimizing the density of LCs and the coupling between Er3+ and LCs.