Visualization of photoexcited free carriers by scanning near-field millimeter-wave microscopy
Visualization of photoexcited free carriers by scanning near-field millimeter-wave microscopy
复制标题
通过扫描近场毫米波显微镜观察光激发自由载流子
DOI：
10.1063/1.126905
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发表时间：
2000
影响因子：
4
通讯作者：
K. Mizuno
中科院分区：
文献类型：
--
作者：
T. Nozokido;J. Bae;K. Mizuno
利用扫描近场毫米波显微镜观察了光激发自由载流子的跃迁现象。实验中使用了使用金属缝隙式探头的扫描毫米波显微镜和基于计算机断层成像的图像重建算法来实现二维时间分辨成像。在60 GHz（λ=5 mm）、室温条件下的实验表明，该系统能以1纳秒的时间分割和110 μm（λ/45）的空间分辨率成像石英衬底上硅层中光激发自由载流子的产生、消光和扩散过程。
Visualization of transition phenomena of photoexcited free carriers by scanning near-field millimeter-wave microscopy has been demonstrated. A scanning millimeter-wave microscope using a metal slit-type probe and an image reconstruction algorithm based on computerized tomographic imaging has been used in the experiment to achieve two-dimensional time-resolved imaging. Experiments performed at 60 GHz (λ=5 mm) under room temperature conditions show that generation, extinction, and diffusion processes of photoexcited free carriers generated in the silicon layer of a silicon on quartz substrate can be imaged with a time division of one nanosecond and a spatial resolution of 110 μm (∼λ/45).