Field-induced heterophase state in PbZrO3 thin films
Field-induced heterophase state in PbZrO3 thin films
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DOI：
10.1103/physrevb.105.125409
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发表时间：
2022-03
影响因子：
3.7
通讯作者：
R. Burkovsky;G. Lityagin;A. Ganzha;A. Vakulenko;R. Gao;A. Dasgupta;Bin Xu;A. Filimonov;
中科院分区：
文献类型：
--
作者：
R. Burkovsky;G. Lityagin;A. Ganzha;A. Vakulenko;R. Gao;A. Dasgupta;Bin Xu;A. Filimonov;
外延反铁电体的应用面临着科学挑战，如对退化（与体相比较）开关行为及其与纳米级结构组织的关系的理解有限。本文报道了（001）异质结构对预临界电场（低于开关所需电场）的一种不寻常的结构响应，原位X射线衍射显示了一种类铁电体结构，这种结构随着外加电场的增加逐渐形成，并与宿主反铁电相组成异相态。场致结构在八面体倾斜模式中类似于反铁电母相，但在铅离子位移模式中不同于反铁电母相。后者可以被编码为，只要反铁电结构被编码为。我们建议，不寻常的介电常数（相对于更普遍的inflation在类似的材料）之间的调制周期的主体和客体相可以解释占的能量的异相边界，这是重要的致密的纳米结构，由于高的表面-体积比的纳米域。使用从头算相关的，但经验（参数化）的能量模型的分析表明，所观察到的场致结构很可能被选择的情况下，而不是其他的，当上述的双折射效应是在发挥作用。结果表明，在这种异质结构中的极化场回路的拖尾机制，并提出了一个角度为控制创建精细的偶极有序铁基存储器。
Applications of epitaxial antiferroelectrics face scientific challenges, such as limited understanding of degraded (in comparison to bulk) switching behavior and its relation to nanoscale structural organization. We report on an unusual structural response of(001) heterostructures to precritical (lower than required for switching) electric fields.In situx-ray diffraction shows a ferrielectric-like structure, which forms gradually upon increasing the applied field and makes up a heterophase state with the host antiferroelectric phase. The field-induced structure is similar to the antiferroelectric parent phase in the octahedral-tilt pattern, but differs from it in the lead-ion displacement pattern. The latter can be encoded asprovided that the antiferroelectric structure is encoded as. We propose that the unusual commensurateness (as opposed to the more ubiquitous incommensuration in similar materials) between the modulation periods of host and guest phases can be explained by accounting for the energy of heterophase boundaries, which is important in dense nanostructures due to the high surface-to-bulk ratio of nanodomains. An analysis using theab-initio-correlated, but empirical (parametrized) energy model suggests that the observed field-induced structure is likely to be selected ininstead of the others in the case when the above commensuration effect is at play. The results point to the mechanism leading to the smearing of polarization-field loops in such heterostructures and suggest a perspective for the controlled creation of delicate dipolar orderings for ferroic-based memory.