AlGaN / GaN HEMTs on SiC with over 100 GHz fT and Low Microwave Noise
AlGaN / GaN HEMTs on SiC with over 100 GHz fT and Low Microwave Noise
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SiC 上的 AlGaN / GaN HEMT 具有超过 100 GHz fT 和低微波噪声
DOI：
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发表时间：
2001
期刊：
影响因子：
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通讯作者：
I. Adesida
中科院分区：
文献类型：
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作者：
Wu Lu;Jinwei Yang;M. Khan;I. Adesida
High performance AlGaN/GaN high electron mobility transistors (HEMTs) with 0.12 m gate-length have been fabricated on an insulating SiC substrate. The devices exhibited an extrinsic transconductance of 217 mS/mm and current drive capability as high as 1.19 A/mm. The threshold voltage of the devices was 5.5 V. For AlGaN/GaN HEMTs with the same gate-length, a record high unity current gain cut-off frequency ( ) of 101 GHz and a maximum oscillation frequency (MAX) of 155 GHz were measured at = 16 5 V and = 5 0 V. The microwave noise performances of the devices were characterized from 2 to 18 GHz at different drain biases and drain currents. At a drain bias of 10 V and a gate bias of 4.8 V, the devices exhibited a minimum noise figure ( min) of 0.53 dB and an associated gain ( ) of 12.1 dB at 8 GHz. Also, at a fixed drain bias of 10 V with the drain current swept, the lowest min of 0.72 dB at 12 GHz was obtained at = 100 mA/mm and a peak of 10.59 dB at 12 GHz was obtained at = 150 mA/mm. With the drain current held at 114 mA/mm and drain bias swept, the lowest min of 0.42 dB and 0.77 dB were obtained at = 8 V at 8 GHz and 12 GHz, respectively. To our knowledge, these are the best microwave noise performances of any GaN-based FETs ever reported.
