Self-trapping in bismuth-based semiconductors: Opportunities and challenges from optoelectronic devices to quantum technologies
Self-trapping in bismuth-based semiconductors: Opportunities and challenges from optoelectronic devices to quantum technologies
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铋基半导体中的自陷：从光电子器件到量子技术的机遇和挑战
DOI：
10.1063/5.0071763
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发表时间：
2021-11-29
影响因子：
4
通讯作者：
Hoye, Robert L. Z.
中科院分区：
文献类型：
--
作者：
Rondiya, Sachin R.;Jagt, Robert A.;Hoye, Robert L. Z.
基于二胰腺卤化物的半导体引起了广泛的电子应用的关注，包括光伏，发光二极管和辐射探测器。它们的吸引力是由于它们的毒性低，环境条件下的高环境稳定性以及通过多种可扩展方法易于加工性。基于BI基的半导体的性能由电子 - 音波相互作用决定，这限制了载体的迁移率，也可以影响光电性能，例如，通过引起较大的STOKES转移光发光，不可避免的能量损失通道，或浅的光学吸收。 。从这个角度来看，我们讨论了对极性和自我捕获的激子/载体如何在BI基半导体中形成的理解（尤其是对于CS2Agbibr6的情况），它们对材料的光电特性的影响以及对设备性能的后果以及对设备性能的影响。最后，我们讨论了控制电子偶联的机会，包括稳定的固态白色照明，以及利用双波隆在量子技术中发现的强耦合的可能性。
Semiconductors based on bismuth halides have gained attention for a wide range of electronic applications, including photovoltaics, light-emitting diodes, and radiation detectors. Their appeal is due to their low toxicity, high environmental stability under ambient conditions, and easy processability by a wide range of scalable methods. The performance of Bi-based semiconductors is dictated by electron-phonon interactions, which limit carrier mobilities and can also influence optoelectronic performance, for example, by giving rise to a large Stokes shift for photoluminescence, unavoidable energy loss channels, or shallow optical absorption onsets. In this Perspective, we discuss the recent understanding of how polarons and self-trapped excitons/carriers form in Bi-based semiconductors (particularly for the case of Cs2AgBiBr6), their impact on the optoelectronic properties of the materials, and the consequences on device performance. Finally, we discuss the opportunities that control of electron-phonon coupling enables, including stable solid-state white lighting, and the possibilities of exploiting the strong coupling found in bipolarons for quantum technologies.