Anisotropic thermal conductivity of Ge quantum-dot and symmetrically strained Si/Ge superlattices
Anisotropic thermal conductivity of Ge quantum-dot and symmetrically strained Si/Ge superlattices
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DOI：
10.1166/jnn.2001.013
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发表时间：
2001-03-01
影响因子：
--
通讯作者：
Wang, KL
中科院分区：
文献类型：
--
作者：
Liu, WL;Borca-Tasciuc, T;Wang, KL
我们首次报道了用双线3omega方法测量对称应变Si/Ge超晶格和Ge量子点超晶格的面内和面间热导率的实验结果。测量的热导率值具有高度的各向异性，与结构的整体热导率相比显着降低。这些结果可以用基于玻尔兹曼输运方程的热输运模型来解释，该模型考虑了声子在超晶格界面上的部分扩散散射。
We report the first experimental results on the temperature dependent in-plane and cross-plane thermal conductivities of a symmetrically strained Si/Ge superlattice and a Ge quantum-dot superlattice measured by the two-wire 3omega method. The measured thermal conductivity values are highly anisotropic and are significantly reduced compared to the bulk thermal conductivity of the structures. The results can be explained by using heat transport models based on the Boltzmann transport equation with partially diffusive scattering of the phonons at the superlattice interfaces.