Microstructure, optical, and scintillation characteristics of Pr3+ doped Lu3Al5O12 optical ceramics

Microstructure, optical, and scintillation characteristics of Pr3+ doped Lu3Al5O12 optical ceramics
复制标题

DOI:
10.1063/1.3530679
复制
发表时间:
2011-01-01
影响因子:
3.2
通讯作者:
Liu, Qian
Liu, Qian
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Shi, Yun;Nikl, Martin;Liu, Qian

文献摘要

被引文献

相似文献

0.5、1.0和5.0。制备了% Pr3+掺杂Lu3Al5O12 (Pr:LuAG)光学陶瓷,并与Bi4Ge3O12 (BGO)和Pr:LuAG单晶进行了光学、发光和闪烁性能的比较。基于5d1 -> - 4f Pr3+跃迁的快速紫外发射辐射发光强度达到BGO单晶参考闪烁体的20倍。光电子产率表现最好的为0.5 at。% Pr:LuAG陶瓷样品约为1002 phels/MeV,比BGO参考样品低约30%,比Pr:LuAG单晶样品低约65%。提出了晶界俘获现象和/或结构缺陷是导致Pr:LuAG光学陶瓷闪烁响应退化的主要原因。(C) 2011年美国物理研究所。(doi: 10.1063/1.3530679)
0.5, 1.0, and 5.0 at. % Pr3+ doped Lu3Al5O12 (Pr:LuAG) optical ceramics are fabricated and compared with Bi4Ge3O12 (BGO) and Pr: LuAG single crystals as for their optical, luminescence and scintillation properties. Radio-luminescence intensity of the fast UV emission based on 5d1 -> 4f Pr3+ transition reaches up to 20 times of that of BGO single crystal reference scintillator. Photoelectron yield of the best performing 0.5 at. % Pr:LuAG ceramic sample is about 1002 phels/MeV, about 30% lower than that of BGO reference sample and about 65% lower than that of Pr:LuAG single crystal. The trapping phenomena at grain boundaries and/or structural defects are proposed as the main cause of degradation of the scintillation response of the Pr:LuAG optical ceramics. (C) 2011 American Institute of Physics. [doi:10.1063/1.3530679]