Plasmonic interactions at the Pb/SeO2 interfaces designed as terahertz/gigahertz optical receivers
Plasmonic interactions at the Pb/SeO2 interfaces designed as terahertz/gigahertz optical receivers
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设计为太赫兹/千兆赫兹光接收器的 Pb/SeO2 界面处的等离子体相互作用
DOI：
10.1016/j.ijleo.2022.169529
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
A. Qasrawi
中科院分区：
文献类型：
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作者：
A. Qasrawi
本文采用厚度为200 nm的半透明铅基片作为等离子体界面，以提高SeO 2薄膜的光电性能。在10- 5 mbar的真空压力下，用物理气相沉积技术制备了Pb/SeO 2界面。结构分析表明，Pb衬底可以诱导氧化硒的四方相的演变。该相在其结构中包含1.27%的立方PbSe。表面形态的研究表明，铅基板更喜欢形成的晶粒尺寸为250 nm的铅微晶的积累所产生的尺寸为37 nm。在光学上，Pb衬底在不改变能带隙值的情况下增加了可见光范围内的光吸收率，在1.15 eV处提高了4%的介电响应，在1.87 eV处提高了40%。此外，Durde-Lorentz模型的光学电导率谱的SeO 2已经表明，铅等离子体共振器增加的等离子体频率和自由载流子密度的Pb/SeO 2接口，使其达到5 G/6 G的技术需求。此外，太赫兹截止频率谱的评估表明，Pb/SeO 2作为光接收器的适用性响应于红外，可见光和紫外波段的光在太赫兹截止频率值为17-160 THz。此外，在0.01-1.80 GHz的频率域的电容和电导谱的研究表明，适合的Pb/SeO 2/C器件作为负电导源，有利于在微波频率域的信号放大。
Herein semitransparent lead substrates of thicknesses of 200 nm are employed as plasmonic interfaces to enhance the optoelectronic performance of SeO2thin films. Pb/SeO2interfaces are fabricated by the physical vapor deposition technique under a vacuum pressure of 10-5mbar. The structural analyses showed that Pb substrates can induce the evolution of tetragonal phase of selenium oxide. The phase comprises 1.27% cubic PbSe in its structure. Surface morphology studies show that Pb substrates prefer formation of grains of sizes of 250 nm resulting from the accumulation of lead crystallites of sizes of 37 nm. Optically, Pb substrates increased the light absorbability in the visible range of light without altering the value of the energy band gap, improved the dielectric response by 4% at 1.15 eV and by 40% at 1.87 eV. In addition, Durde-Lorentz modeling of the optical conductivity spectra of SeO2has shown that Pb plasmonic resonators increase the plasmon frequency and free carrier density of Pb/SeO2interfaces allowing it reaching 5 G/6 G technology needs. Moreover, evaluation of the terahertz cutoff frequency spectra indicated the applicability of the Pb/SeO2as optical receivers responsive to infrared, visible and ultraviolet bands of light at terahertz cutoff frequency values of 17–160 THz. Furthermore, the capacitance and conductance spectral studies in the frequency domain of 0.01–1.80 GHz indicated the suitability of Pb/SeO2/C devices as negative conductance sources beneficial for signal amplification in the microwave frequency domain.