Gate leakage-current analysis and modelling of planar and trench power SiC MOSFET devices in extreme short-circuit operation
Gate leakage-current analysis and modelling of planar and trench power SiC MOSFET devices in extreme short-circuit operation
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DOI：
10.1016/j.microrel.2017.06.084
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发表时间：
2017-09-01
影响因子：
1.6
通讯作者：
Richardeau, F.
中科院分区：
文献类型：
--
作者：
Boige, F.;Richardeau, F.
本文的目的是对来自五个不同制造商的 1200 V SiC MOSFET（包括平面和沟槽栅极结构）在短路 (SC) 故障操作期间的栅极漏电流行为进行完整分析。坚固性和栅极泄漏水平根据芯片尺寸进行评估。最后，对栅极漏电流进行建模并测试鲁棒性。 (C) 2017 Elsevier Ltd. 保留所有权利。
The purpose of this paper is to present a complete analysis of the gate leakage-current behaviour during short-circuit (SC) fault operation of 1200 V SiC MOSFETs from five different manufacturers including planar and trench-gate structures. Ruggedness and gate leakage level are evaluated in function of the chip size. Finally, the gate leakage current is modelled and the robustness tested. (C) 2017 Elsevier Ltd. All rights reserved.