Quantitative Multi-Physics Quantum Transport Modeling of GaN-Based Light Emitting Diodes

Quantitative Multi-Physics Quantum Transport Modeling of GaN-Based Light Emitting Diodes
复制标题

GaN 基发光二极管的定量多物理量子传输建模

DOI:
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发表时间:
2018
期刊:
Applications and materials science
影响因子:
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通讯作者:
Geng, J.
Geng, J.
中科院分区:
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文献类型:
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作者:
Geng, J.

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