Micro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001)
Micro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001)
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离轴 4H-SiC 上外延石墨烯的微米级和纳米级电学表征 (0001)
DOI：
10.4028/www.scientific.net/msf.717-720.637
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
V. Raineri
中科院分区：
文献类型：
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作者：
F. Giannazzo;C. Bongiorno;S. Di Franco;E. Rimini;V. Raineri
研究了在8°离轴4 H-SiC（0001）上外延生长的石墨烯（EG）在1600 °C惰性气体（Ar）气氛下退火后的电学性能。EG层的薄层电阻（Rsh=740±50Ω/sq）和Ni触点对EG的比接触电阻（ρc = 6x 10 -5 Ω cm 2）通过在传输线模型（TLM）结构上的测量在微米尺度上进行评估。Si 3 N4作为栅极电介质进行了评估，显示出对EG的优异覆盖率和对其导电性的有限影响。使用具有Si 3 N4栅极介质的顶栅场效应晶体管（FET）确定EG的高n型掺杂（~1013 cm-2）以及场效应迁移率（μ）对n的依赖性。电子平均自由程（lloc）和迁移率（μloc）也局部确定，在亚微米尺度上，通过扫描探针显微镜，显示了广泛的分布μloc值，与宏观载流子迁移率μ非常相似的最可能的值。
The electrical properties of epitaxial graphene (EG) grown on 8° off-axis 4H-SiC (0001) by annealing at 1600 °C in inert gas ambient (Ar) were studied. The sheet resistance of the EG layers (Rsh=740±50Ω/sq) and the specific contact resistance of Ni contacts to EG (ρc≈6x10-5 Ωcm2) were evaluated on micrometer scale by measurements on transmission line model (TLM) structures. Si3N4 was evaluated as a gate dielectric, showing excellent coverage to EG and a limited effect on its conductivity. The high n-type doping (~1013 cm-2) of EG, as well as the field effect mobility (μ) dependence on n were determined using top gated field effect transistors (FETs) with Si3N4 gate dielectric. Electron mean free path (lloc) and mobility (μloc) were also locally determined, on submicrometer scale, by scanning probe microscopy, showing a broad distribution of μloc values, with the most probable value very similar to macroscopic carrier mobility μ.