Hall Scattering Factor for Electrons and Holes in SiC
Hall Scattering Factor for Electrons and Holes in SiC
复制标题
SiC 中电子和空穴的霍尔散射因子
DOI：
10.1007/978-3-642-18870-1_21
复制
发表时间：
2004
影响因子：
3.2
通讯作者：
G. Wagner
中科院分区：
文献类型：
--
作者：
F. Schmid;M. Krieger;M. Laube;G. Pensl;G. Wagner
简要描述了对 n 型和 p 型 4H-/6H-SiC 霍尔效应数据的分析，并证明了激发态的影响。介绍了在低磁场和高磁场下电子 r H,e(T, B) 的霍尔散射因子的确定方法，并提供了从文献中获取的与温度相关的值。空穴的低场霍尔散射因子 r H,h(T, B) 通过比较自由空穴浓度 p(T) 来获得，该浓度 p(T) 可以通过霍尔效应测量确定，也可以根据中性方程与 SIMS 或 C-V 确定的缺陷参数计算得出。针对一系列掺铝 4H-SiC 层，确定并测试了 r H,h(T, B) 在 100 K 至 800 K 范围内的温度依赖性。
The analysis of Hall effect data taken on n-and p-type 4H-/6H-SiC is briefly described and the effect of excited states is demonstrated. The determination of the Hall scattering factor for electrons r H,e(T, B) at low and high magnetic fields is introduced and temperature-dependent values taken from the literature are provided. The low field Hall scattering factor for holes r H,h(T, B) is obtained from a comparison of the free hole concentration p(T) either determined by Hall effect measurement or calculated on the basis of the neutrality equation with defect parameters determined by SIMS or C-V. The temperature dependence of r H,h(T, B) in the range from 100 K to 800 K is determined and tested for a series of Al-doped 4H-SiC layers.