Electron Nonionizing Energy Loss for Device Applications
Electron Nonionizing Energy Loss for Device Applications
复制标题
设备应用的电子非电离能量损失
DOI：
10.1109/tns.2009.2033692
复制
发表时间：
2009
影响因子：
1.8
通讯作者：
R. Evans
中科院分区：
文献类型：
--
作者：
I. Jun;Wousik Kim;R. Evans
本文介绍了具有代表性的器件和探测器材料的电子诱导非电离能量损失。利用Mott微分截面对电子NIELs进行了解析计算。配分函数描述的是沉积到置换晶格原子中的能量，用Akkerman最近发展的表达式更适合于低反冲能量。
The electron induced nonionizing energy loss (NIEL) for representative device and detector materials are presented here. The electron NIELs are computed analytically using the Mott differential cross section. As for the partition function, which describes the portion of energy deposited into displacing lattice atoms, the expression recently developed by Akkerman was used that better fits for the low recoil energy.