3D-IC dynamic thermal analysis with hierarchical and configurable chip thermal model

3D-IC dynamic thermal analysis with hierarchical and configurable chip thermal model
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具有分层和可配置芯片热模型的 3D-IC 动态热分析

DOI:
10.1109/3dic.2013.6702373
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发表时间:
2013
期刊:
2013 IEEE International 3D Systems Integration Conference (3DIC)
影响因子:
--
通讯作者:
Tada Hitomi
Tada Hitomi
中科院分区:
--
文献类型:
--
作者:
S. Pan;N. Chang;Tada Hitomi

文献摘要

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3D-IC中的热响应对于热传感器放置,Tmax控制和热感知电迁移(EM)的芯片签名影响非常重要。3D-IC中的热响应,无论是稳态还是瞬态,都与周围组件(即封装,电路板和系统)紧密耦合。该研究证实,在芯片封装系统(CPS) 3D-IC环境中,芯片热动力学达到稳定状态所需的时间可能需要数十秒或更长时间,而不是许多使用芯片热模型的文章中看到的毫、微或纳秒。高频功率振荡不会导致芯片内明显的温度变化,这是由于周围环境的高热容。动态热分析中最实用的功率模式是芯片活动中的平均功率模式,例如,基于芯片中无矢量或事件驱动活动的芯片热模型(CTM)。用于3D-IC的ctm可以以分层或可配置的方式实现。随着电源活动依次接通和关闭,3D-IC中的瞬态响应可以使用格林的电源瞬态函数有效地模拟。本文给出了基于不同工作活动的功率模式和高低功率切换的热分析示例。
The thermal response in 3D-IC is important for its impact on chip sign-off for thermal sensor placement, Tmax control, and thermal-aware electro-migration (EM). Thermal responses in 3D-IC, for either steady state or transient, are strongly coupled with surrounding components, i.e., package, board, and system. This study verified that in a chip-package-system (CPS) 3D-IC environment, the time it took to reach a steady state in chip thermal dynamics can take more than tens of seconds or longer, instead of the mili, micro, or nano seconds seen in many articles using a chip-only thermal model. High frequency power oscillations will not lead to significant temperature variations in chips, due to the high thermal capacitance in the surrounding environment. The most practical power modes for dynamic thermal analysis are the average ones in chip activities, e.g., Chip Thermal Model (CTM), based on either vectorless or event-driven activities in a chip. CTMs for 3D-IC can be implemented in a hierarchical or configurable way. With power activities on and off in sequence, transient responses in 3D-IC can be simulated efficiently using Green's functions of power-on transients. Sample cases of thermal analysis based on power modes from different operating activities, and high-low power switching are presented here.