Blue light emission from the heterostructured ZnO/InGaN/GaN.
Blue light emission from the heterostructured ZnO/InGaN/GaN.
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异质结构 ZnO/InGaN/GaN 的蓝光发射
DOI：
10.1186/1556-276x-8-99
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发表时间：
2013-02-22
影响因子：
--
通讯作者：
Liu C
中科院分区：
文献类型：
--
作者：
Wang T;Wu H;Wang Z;Chen C;Liu C
采用分子束外延和原子层沉积的方法制备了ZnO/InGaN/GaN异质结构发光二极管。InGaN薄膜由掺镁的InGaN层、未掺杂的InGaN层和掺硅的InGaN层组成。异质结的电流-电压特性显示出类似二极管的整流行为。正向偏压下的电致发光光谱呈现蓝色发射，并伴随着一个中心位于600 nm的宽峰。在合适的发光强度比下，异质结构LED在白光LED中具有潜在的应用前景。此外，在反向偏压下观察到了紫外光发射和中心位于560 nm的发射峰。
ZnO/InGaN/GaN heterostructured light-emitting diodes (LEDs) were fabricated by molecular beam epitaxy and atomic layer deposition. InGaN films consisted of an Mg-doped InGaN layer, an undoped InGaN layer, and a Si-doped InGaN layer. Current-voltage characteristic of the heterojunction indicated a diode-like rectification behavior. The electroluminescence spectra under forward biases presented a blue emission accompanied by a broad peak centered at 600 nm. With appropriate emission intensity ratio, the heterostructured LEDs had potential application in white LEDs. Moreover, a UV emission and an emission peak centered at 560 nm were observed under reverse bias.