Room‐temperature enhancement of electro‐optical modulation by resonance‐induced exciton mixing in a GaAs/AlAs superlattice
Room‐temperature enhancement of electro‐optical modulation by resonance‐induced exciton mixing in a GaAs/AlAs superlattice
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GaAs/AlAs 超晶格中共振诱导激子混合的室温增强电光调制
DOI：
10.1063/1.105043
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发表时间：
1991
期刊：
影响因子：
--
通讯作者：
K. Ploog
中科院分区：
文献类型：
--
作者：
H. Schneider;K. Ploog
我们报道了GaAs/AlAs短周期超晶格的室温吸收特性，其中在垂直于层的特定电场下，以相邻和非相邻井为中心的不同传导亚带表现出水平排斥和抗交叉行为。相应的电子波函数之间的混合降低了振子强度并影响了某些激子的跃迁能量。这些电场效应可用于改善电光调制器器件的性能。我们的结果也为研究超晶格中载流子的高场相干性提供了一种方法。
We report on room‐temperature absorption properties of a GaAs/AlAs short‐period superlattice in which, at certain electric fields perpendicular to the layers, different conduction subbands centered in adjacent and nonadjacent wells show a level repulsion and an anticrossing behavior. The associated mixing between the corresponding electron wave functions reduces the oscillator strengths and influences the transition energies of certain excitons. These electric field effects can be used to improve the performance of electro‐optical modulator devices. Our results also provide a method to investigate the high‐field coherence properties of charge carriers in superlattices.