Formation of copper silicides from Cu(100)/Si(100) and Cu(111)/Si(111) structures
Formation of copper silicides from Cu(100)/Si(100) and Cu(111)/Si(111) structures
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DOI：
10.1063/1.345194
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发表时间：
1990
影响因子：
3.2
通讯作者：
Chin-An Chang
中科院分区：
文献类型：
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作者：
Chin-An Chang
使用不同取向的硅和铜研究铜和硅之间的反应。在室温下通过电子束蒸发沉积而无需有意加热基板的铜膜显示出与硅基板的外延关系，从而分别在（100）和（111）硅上形成（100）和（111）取向的铜膜。观察到 Cu-Si 反应的取向依赖性，形成不同相的硅化物。例如，在 200 °C 时，(100) 取向结构的硅化物形成速率大约是 (111) 取向结构的五倍。界面键合模型用于与观察到的取向依赖性相关，并与之前在 Au-Si 和 Au-Cu 系统上的工作进行比较。 Si 的金刚石结构有利于 (100) 表面进行反应，正如在 Au-Si 反应中观察到的那样。然而，Cu 的面心立方结构有利于反应的 (111) 方向。后者是在使用外延铜膜的 Au-Cu 反应中观察到的……
The reaction between copper and silicon is studied using differently oriented Si and Cu. Copper films, deposited by electron‐beam evaporation at room temperature without intentional heating of the substrates, show an epitaxial relation with the Si substrates, resulting in (100)‐ and (111)‐oriented Cu films on the (100) and (111) Si, respectively. An orientation dependence is observed for the Cu‐Si reaction, with different phases of the silicides formed. At 200 °C, for example, the silicide formation rate is about five times faster for the (100)‐oriented structures than for the (111) ones. An interface bonding model is used to relate to the orientation dependence observed, and is compared with previous work on the Au‐Si and Au‐Cu systems. The diamond structure of Si favors the (100) surface for reaction, as is observed for the Au‐Si reaction. The face‐centered‐cubic structure of Cu, however, favors the (111) orientation for reaction. The latter is observed for the Au‐Cu reaction using epitaxial Cu films on...