Lattice defects related magnetic and magnetocapacitance properties of multiferroic BaFe10.2Sc1.8O19 epitaxial thin films
Lattice defects related magnetic and magnetocapacitance properties of multiferroic BaFe10.2Sc1.8O19 epitaxial thin films
复制标题
多铁性BaFe 10.2 Sc 1.8 O 19 外延薄膜的磁和磁电容特性与晶格缺陷相关
DOI：
10.1016/j.scriptamat.2021.114466
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发表时间：
2022-03-15
影响因子：
6
通讯作者：
Tang, Rujun
中科院分区：
文献类型：
--
作者：
Xu, Sichen;Zhu, Qishan;Tang, Rujun
在不改变BaFe_（10.2）Sc_（1.8）O_（19）（BFSO）外延薄膜晶体结构的情况下，通过改变薄膜中的晶格缺陷密度（DLD），可以实现对BaFe_（10.2）Sc_（1.8）O_（19）外延薄膜饱和磁化强度（75 ~ 180 emu/cc）、磁各向异性场（3590 ~ 1434 Oe）和多铁性有序温度（207 ~ 306 K）的显著调制。定义了与缺陷相关的有效磁场H-eff。H-eff随退火温度T-A的升高而明显降低，这与DLD的降低相一致。在磁电容器件中进一步验证了BFSO薄膜的缺陷相关磁有序性。1000 ℃退火后薄膜的磁电容比沉积态薄膜的磁电容大5倍以上。这可以用BFSO中的非共线锥形磁结构和自旋-声子耦合对DLD相关局域晶格结构的超敏感性来解释。上述发现使我们更好地理解和利用晶格缺陷来调节多铁性六角铁氧体器件的物理性能。(C)2021 Acta Materialia Inc.由爱思唯尔有限公司出版。保留所有权利。
Without changing the crystalline structure of BaFe10.2Sc1.8O19 (BFSO) epitaxial thin film, significant modulation of its saturation magnetization (from 75 to 180 emu/cc), magnetic anisotropy field (from 3590 to 1434 Oe) and multiferroic ordering temperature (from 207 to 306 K) can be realized with different densities of lattice defects (DLD). A defects-related effective magnetic field H-eff is defined. H-eff reduces obviously with increasing annealing temperature T-A, agreeing well with the reduced DLD. The defects-related magnetic ordering of BFSO films is further verified in the magnetocapacitance devices. The magnetocapacitance for 1000 degrees C annealed film is more than 5 times larger than that of as-deposited film. This can be explained by the ultra-sensitive of non-collinear conical magnetic structure and spin-phonon coupling in BFSO to the DLD related local lattice structure. The above findings enable better understanding and usage of lattice defects on regulating the physical properties of multiferroic hexaferrite devices. (C) 2021 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.