Extraction method of trap densities for indium zinc oxide thin-film transistors processed by solution method
Extraction method of trap densities for indium zinc oxide thin-film transistors processed by solution method
复制标题
溶液法氧化铟锌薄膜晶体管陷阱密度的提取方法
DOI：
10.1016/j.tsf.2018.01.020
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发表时间：
2018-03-01
期刊：
影响因子：
2.1
通讯作者：
Wang, Gang
中科院分区：
文献类型：
--
作者：
Qiang, Lei;Liang, Xiaoci;Wang, Gang
根据正偏置应力（PBS）不稳定性，导出了溶液法加工铟锌氧化物（IZO）薄膜晶体管（TFTs）中陷阱态分布的广义方程。在这种提取方法中，可以同时获得界面阱态和体阱态的密度。结果表明，在双有源层IZO TFT中，在高流量氧（O-2）气氛中快速退火（RTA）退火的前通道（底层）在绝缘子与IZO界面处存在比在氮（N-2）气氛中退火的更多的陷阱。同时，双层叠态IZO tft的体阱态密度低于单有源层IZO tft。此外，还探讨了电特性与陷阱态密度的具体关系。结果表明，TFT的阈下摆动更依赖于界面状态。此外，与单有源层的IZO TFT相反，堆叠TFT每秒传输曲线的正位移在100到200秒范围内增加，此时应考虑两有源层之间的界面区域。但总体而言，双层有源结构可以在一定程度上优化器件的性能。
In accordance with the positive bias stress (PBS) instability, generalized equations are derived to extract distributions of trap states in indium zinc oxide (IZO) thin film transistors (TFTs) processed by solution method. In this extraction method, densities of both interface trap states and bulk trap states can be obtained simultaneously. It demonstrates that in the double-active-layer IZO TFT, the front-channel (the bottom layer) annealed by rapid thermal annealing (RTA) in oxygen (O-2) atmosphere with high flow rate has more traps at the interface between insulator and IZO than that annealed in nitrogen (N-2). Meanwhile, the density of bulk trap states in the bilayer stack IZO TFTs is lower than that in the single-active-layer IZO TFTs. In addition, the specific association of electric characteristics with trap states density also has been explored. Results imply that the subthreshold swing of TFT relies more heavily on interface states. Furthermore, contrary to IZO TFT with single active layer, the positive shift of transfer curves per second increased for stacked TFT in the range from 100 to 200 s, at this point one should take into account the interfacial region between two active layers. Nevertheless, on the whole, double-layered active structure can optimize the performance of devices to some extent.