Br-doping CH3NH3PbI3-xBrxthin films for efficient TiO2nanorod array perovskite solar cells
Br-doping CH3NH3PbI3-xBrxthin films for efficient TiO2nanorod array perovskite solar cells
复制标题
用于高效 TiO2 纳米棒阵列钙钛矿太阳能电池的 Br 掺杂 CH3NH3PbI3-xBrx 薄膜
DOI：
10.1166/jnn.2018.15360
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发表时间：
2018
影响因子：
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通讯作者：
Shi Chengwu
中科院分区：
文献类型：
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作者：
Li Long;Wang Yanqing;Deng Xinlian;Nie Linhui;Cui Zhendong;Shi Chengwu;Shi Chengwu
采用1.7 M PbI2·DMSO络合物溶液和不同CH3NH3Br含量（摩尔比）的0.465 M CH3NH3 x(x = Br, I)前驱体，采用顺序沉积法，在TiO2纳米棒阵列上成功制备了不同Br含量的CH3NH3PbI3−x Br x薄膜。系统研究了CH3NH3Br含量对CH3NH3PbI3−x Br x 薄膜的化学组成、结晶度、光吸收和表面形貌的影响，并评估了相应TiO2纳米棒阵列钙钛矿太阳能电池的光伏性能。结果表明，使用含有 5% CH3NH3Br 的 CH3NH3 x 前驱体的 CH3NH3PbI3−xBrx 太阳能电池表现出最佳光电转换效率（PCE），为 16.47%，开路电压（V oc）为 1.02 V，短路光电流密度（J sc）为 20.99 mA·cm−2，填充因子（FF）为 0.77，平均 PCE 为在模拟 AM 1.5 太阳光 (100 mA cm−2) 照射下，V oc 为 16.06 ± 0.52%，V oc 为 1.02 ± 0.01 V，J sc 为 20.41 ± 0.58 mA · cm−2，FF 为 0.77 ± 0.01。
CH3NH3PbI3−x Br x thin films with different Br contents were successfully prepared on TiO2 nanorod array using 1.7 M PbI2 · DMSO complex solution and 0.465 M CH3NH3 x(x = Br, I) precursors with different CH3NH3Br contents (molar ratios) by sequential deposition method. The influence of CH3NH3Br contents on the chemical composition, crystallinity, optical absorption and surface morphology of the CH3NH3PbI3−x Br x thin films was systematically investigated, and the photovoltaic performance of the corresponding TiO2 nanorod array perovskite solar cells was evaluated. The results revealed that the CH3NH3PbI3−xBrx solar cells using CH3NH3 x precursors with 5% CH3NH3Br exhibited the best photoelectric conversion efficiency (PCE) of 16.47%, along with an open-circuit voltage (V oc) of 1.02 V, short-circuit photocurrent density (J sc) of 20.99 mA · cm−2 and fill factor (FF) of 0.77, and the average PCE of 16.06 ± 0.52%, along with V oc of 1.02 ± 0.01 V, J sc of 20.41 ± 0.58 mA · cm−2 and FF of 0.77 ± 0.01 under illumination of simulated AM 1.5 sunlight (100 mA cm−2).