Extremely anisotropic single-crystal growth in nanotwinned copper
Extremely anisotropic single-crystal growth in nanotwinned copper
复制标题
DOI：
10.1038/am.2014.90
复制
发表时间：
2014-10-01
影响因子：
9.7
通讯作者：
Tu, King-Ning
中科院分区：
文献类型：
--
作者：
Lu, Chia-Ling;Lin, Han-Wen;Tu, King-Ning
通过在硅片表面电镀几乎单向<111>取向的纳米孪晶和细晶铜，然后在400-500摄氏度下退火长达1小时，我们生长了许多极大的<100>取向的铜单晶，尺寸范围为200至400μm。通过对纳米孪晶铜薄膜进行图案化和退火，我们在硅上生长了一系列 <100> 取向的铜单晶，尺寸范围为 25 至 100 μm。相比之下，单晶纳米线的生长是一维各向异性的生长过程，其中沿轴向的生长速度比沿径向的生长速度快得多。我们在此报告了在硅上大量 <100> 取向的 Cu 单晶阵列的体型二维晶体生长。这种生长工艺在手持消费电子产品的三维集成电路封装技术中具有微凸块应用的潜力。
By electroplating of nearly unidirectionally < 111 >-oriented nanotwinned and fine-grained Cu on a Si wafer surface followed by annealing at 400-500 degrees C for up to 1 h, we grew many extremely large < 100 >-oriented single crystals of Cu with sizes ranging from 200 to 400 mu m. By patterning and annealing the nanotwinned Cu films, we grew an array of < 100 >-oriented single crystals of Cu with sizes ranging from 25 to 100 mu m on Si. In comparison, single-crystal nano-wire growth is a one-dimensional anisotropic growth process, in which the growth along the axial direction is much faster than in the radial direction. We report here a bulk-type two-dimensional crystal growth of an array of numerous < 100 >-oriented single crystals of Cu on Si. This growth process has the potential for microbump applications in three-dimensional integrated circuit-packaging technology for hand-held consumer electronic products.