Properties of InGaAs/GaAs QW coupled edge and surface emitting tilted cavity lasers
Properties of InGaAs/GaAs QW coupled edge and surface emitting tilted cavity lasers
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InGaAs/GaAs QW 耦合边发射和面发射倾斜腔激光器的特性
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
A. Schindler
中科院分区：
文献类型：
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作者：
J. Kovac jr.;J. Kováč;D. Pudiš;A. Šatka;F. Uherek;V. Gottschalch;B. Rheinländer;H. Herrnberger;J. Zajadacz;K. Zimmer;A. Schindler
报道了一种基于InGaAs/GaAs双量子阱结构的耦合边水平腔垂直发射激光器（CE-HCSEL）的结构设计和光学特性。CE-HCSEL集成了两个氧化物条形激光器，通过45°蚀刻前端面终止的空气狭缝耦合，产生垂直于表面的全内反射。使用化学辅助离子束蚀刻来制造前反射镜刻面，同时用SiOx/Si布拉格反射镜涂覆裂开的后刻面。所提出的器件的特点是提高斜率效率记录在L-I特性和稳定的单纵模操作在1165.22 nm的窄线宽为0.1 nm。激光腔中的空气狭缝和后端面的介质布拉格反射镜改善了对传播光的滤波和反射，有利于单纵模工作，并提高了边模抑制比。此外，我们发现偏转部分作为一个放大区与测量的最大光学增强为3。
We report on a new structure design and optical properties of the coupled edge and horizontal cavity vertical emitting laser (CE-HCSEL) with emission wavelength of ∼1160 nm based on InGaAs/GaAs double quantum well structure in the active layer. The CE-HCSEL incorporates two oxide stripe lasers coupled through the air slit terminated by 45° etched front facet that produce total internal reflection perpendicular to the surface. The front mirror facet were fabricated using chemically assisted ion beam etching while the cleaved rear facets were coated with SiOx/Si Bragg mirrors. The presented devices are characterized by improved slope efficiency documented in L-I characteristics and the stable single-longitudinal mode operation at 1165.22 nm with narrow line width of 0.1 nm. The etched air slit in the laser cavity and a dielectric Bragg mirrors at the rear facet improved the filtering and reflection of the propagated light, what preferred the single-longitudinal mode operation accompanied by an increase of the side-mode-suppression ratio. In addition we found that the deflection part acts as an amplifying region with the measured maximal optical enhancement of 3.