Thermal decomposition of alkyl monolayers covalently grafted on (111) silicon
Thermal decomposition of alkyl monolayers covalently grafted on (111) silicon
复制标题
(111)硅上共价接枝的烷基单分子层的热分解
DOI：
--
复制
发表时间：
2006
期刊：
影响因子：
--
通讯作者：
J. Chazalviel
中科院分区：
文献类型：
--
作者：
A. Faucheux;F. Yang;P. Allongue;C. D. Villeneuve;F. Ozanam;J. Chazalviel
通过 1-烯烃的氢化硅烷化，烷基单分子层共价接枝到原子级平坦的 (111) 氢化硅表面。使用专门设计的变温池，通过定量原位红外光谱研究了氧化或还原气氛下各层的热稳定性。这些层在高达 250°C 的温度下具有热稳定性。在250-300℃范围内，主要反应是烯烃解吸并伴有硅氧化。改变气氛、层的初始堆积密度或从 C18 到 C6 的链长不会显着影响特征解吸温度，但非常短的链显得更稳定。
Alkyl monolayers have been covalently grafted onto atomically flat (111) hydrogenated silicon surfaces through hydrosilylation of 1-alkenes. The thermal stability of the layers under oxidizing or reducing atmospheres has been investigated by quantitative in situ infrared spectroscopy, using a specially designed variable-temperature cell. The layers are thermally stable up to 250°C. In the range of 250–300°C, the main reaction is alkene desorption accompanied with silicon oxidation. The characteristic desorption temperature is not significantly affected by changing the atmosphere, the initial packing density of the layers, or the chain length from C18 to C6, but very short chains appear more stable.