Electrical Stress and Total Ionizing Dose Effects on ${\hbox {MoS}}_{2}$ Transistors
Electrical Stress and Total Ionizing Dose Effects on ${\hbox {MoS}}_{2}$ Transistors
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DOI：
10.1109/tns.2014.2365522
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发表时间：
2014-11
影响因子：
1.8
通讯作者：
C. X. Zhang;A. Newaz;Bin Wang-;E. Zhang;G. Duan;D. Fleetwood;M. Alles;peixiong zhao;K. Bolotin;S. Pantelides
中科院分区：
文献类型：
--
作者：
C. X. Zhang;A. Newaz;Bin Wang-;E. Zhang;G. Duan;D. Fleetwood;M. Alles;peixiong zhao;K. Bolotin;S. Pantelides
电应力和10 keV的X射线照射和退火响应进行评估背栅二硫化钼晶体管。恒定电压应力下，器件特性相对稳定。正、负偏压辐照后，漏极电流均显著降低。密度泛函理论计算和臭氧暴露实验表明，在10 keV的X射线照射过程中，吸附在二硫化钼表面上的氧原子作为电子陷阱的功能，导致迁移率下降和电压漂移。
Electrical stress and 10-keV x-ray irradiation and annealing responses are evaluated for back-gate MoS2 transistors. Relative stability of device characteristics is observed for constant-voltage stress. The drain current decreases significantly after both positive and negative bias irradiation. Density functional theory calculations and ozone exposure experiments suggest that O atoms adsorbed on the MoS2 surface during 10-keV x-ray irradiation function as electron traps, causing mobility degradation and voltage shifts.