Superacid-Treated Silicon Surfaces: Extending the Limit of Carrier Lifetime for Photovoltaic Applications
Superacid-Treated Silicon Surfaces: Extending the Limit of Carrier Lifetime for Photovoltaic Applications
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DOI：
10.1109/jphotov.2017.2751511
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发表时间：
2017-10
影响因子：
3
通讯作者：
N. Grant;T. Niewelt;N. Wilson;Evangeline C. Wheeler-Jones;J. Bullock;M. Al-Amin;M. Schubert;A. V. van Veen;A. Javey;J. D. Murphy
中科院分区：
文献类型：
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作者：
N. Grant;T. Niewelt;N. Wilson;Evangeline C. Wheeler-Jones;J. Bullock;M. Al-Amin;M. Schubert;A. V. van Veen;A. Javey;J. D. Murphy
最大限度地减少界面处的载流子复合在高效光伏器件的开发和体材料表征中具有极其重要的意义。在这里，我们调查了一个临时的室温超强酸为基础的钝化方案，它提供了低于1厘米/秒的表面复合速度，从而将我们的钝化方案之间的国家的最先进的介电薄膜。将该技术应用于高质量浮区硅，可以达到目前公认的本征载流子寿命极限，并对1 Ω·cm n型晶片的电流参数化提出质疑。钝化还使得在高电阻率直拉硅中测量的寿命高达65 ms，据我们所知，这是直拉生长材料中测量到的最高寿命。在这项工作中开发的钝化策略将有助于诊断太阳能电池加工条件下的体寿命退化，也有助于量化新的钝化方案的电子质量。
Minimizing carrier recombination at interfaces is of extreme importance in the development of high-efficiency photovoltaic devices and for bulk material characterization. Here, we investigate a temporary room temperature superacid-based passivation scheme, which provides surface recombination velocities below 1 cm/s, thus placing our passivation scheme amongst state-of-the-art dielectric films. Application of the technique to high-quality float-zone silicon allows the currently accepted intrinsic carrier lifetime limit to be reached and calls its current parameterization into doubt for 1 Ω·cm n-type wafers. The passivation also enables lifetimes up to 65 ms to be measured in high-resistivity Czochralski silicon, which, to our knowledge, is the highest ever measured in Czochralski-grown material. The passivation strategies developed in this work will help diagnose bulk lifetime degradation under solar cell processing conditions and also help quantify the electronic quality of new passivation schemes.