Optical and microstructural characterization of chemically synthesized gallium nitride nanopowders
Optical and microstructural characterization of chemically synthesized gallium nitride nanopowders
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化学合成氮化镓纳米粉末的光学和微观结构表征
DOI：
10.1063/1.119565
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发表时间：
1997
影响因子：
4
通讯作者：
M. José
中科院分区：
文献类型：
--
作者：
K. Gonsalves;S. Rangarajan;G. Carlson;J. Kumar;Ke‐Ke Yang;M. Benaissa;M. José
酰胺基前体[Ga 2（NMe 2）6，Me= CH 3]在氨气氛中的热分解产生纳米结构的氮化镓粉末。纳米尺寸的氮化镓的X射线衍射光谱表现出对应于面心立方（zinc zin高分辨率透射电子显微镜证实了材料的立方结构和fcc结构内堆垛层错的证据。红外光谱显示在550 cm−1处的特征Ga-N伸缩。透射电子显微镜测量表明，GaN由150 nm尺寸的颗粒组成，这些颗粒又是具有150 nm畴尺寸的较小颗粒的聚集体。发现GaN的光致发光（PL）发射光谱对在378和317 nm处呈现峰值的激发波长敏感。PL激发光谱显示在200-300 nm区域的共振。这些PL结果表明在这些GaN颗粒中的量子限制的效果。
Thermal decomposition of an amido precursor; [Ga2(NMe2)6, Me=CH3] in an ammonia atmosphere yielded nanostructured gallium nitride powder. The x-ray diffraction spectrum of the nanosized gallium nitride exhibited reflections corresponding to the lattice planes of fcc (zinc blende) GaN. High resolution transmission electron microscopy confirmed the cubic structure of the material and evidence of stacking faults within the fcc structure. Infrared spectra showed the characteristic Ga–N stretch at 550 cm−1. Transmission electron microscope measurements indicated that the GaN consisted of ≈50 nm sized particles which in turn are agglomerates of smaller particles with ≈5 nm domain sizes. The photoluminescence (PL) emission spectrum of the GaN was found to be sensitive to the excitation wavelength exhibiting peaks at 378 and 317 nm. The PL excitation spectrum showed resonances in the 200–300 nm region. These PL results suggest the effect of quantum confinement in these GaN particles.