Lithium ion trapping mechanism of SiO2 in LiCoO2 based memristors
Lithium ion trapping mechanism of SiO2 in LiCoO2 based memristors
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DOI：
10.1038/s41598-019-41508-3
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发表时间：
2019-03
影响因子：
4.6
通讯作者：
Qi Hu;Runmiao Li;Xinjiang Zhang;Qin Gao;Mei Wang;Hongliang Shi;Zhisong Xiao;P. Chu;A. Huang
中科院分区：
文献类型：
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作者：
Qi Hu;Runmiao Li;Xinjiang Zhang;Qin Gao;Mei Wang;Hongliang Shi;Zhisong Xiao;P. Chu;A. Huang
制备了不同SiO2厚度的Pt/LiCoO 2/SiO2/Si叠层，并研究了SiO2对忆阻特性的影响。结果表明，SiO2可以作为Li离子的捕获层，有利于器件的保持，但必须控制SiO2的厚度，以避免SET电压过大和状态不稳定。提出了基于能斯特势和扩散势的LiCoO 2基忆阻器电动势仿真模型。模拟结果表明，SiO2陷阱层降低了器件的总电动势，从而阻止了Li离子向LiCoO 2的迁移.该模型与实验数据吻合较好，揭示了LiCoO 2基忆阻器中SiO2对Li离子的捕获机理.
Pt/LiCoO2/SiO2/Si stacks with different SiO2thicknesses are fabricated and the influence of SiO2on memristive behavior is investigated. It is demonstrated that SiO2can serve as Li ion trapping layer benefiting device retention, and the thickness of SiO2must be controlled to avoid large SET voltage and state instability. Simulation model based on Nernst potential and diffusion potential is postulated for electromotive force in LiCoO2based memristors. The simulation results show that SiO2trapping layer decreases the total electromotive field of device and thereby prevents Li ions from migrating back to LiCoO2. This model shows a good agreement with experimental data and reveals the Li ion trapping mechanism of SiO2in LiCoO2based memristors.