Growth of a smooth CaF2 layer on NdFeAsO thin film
Growth of a smooth CaF2 layer on NdFeAsO thin film
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NdFeAsO 薄膜上光滑 CaF2 层的生长
DOI：
10.1088/1742-6596/507/1/012047
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
and H. Ikuta
中科院分区：
文献类型：
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作者：
N. Sumiya;T. Kawaguchi;M. Chihara;M. Tabuchi;T. Ujihara;A. Ichinose;I. Tsukada;and H. Ikuta
由于CaF 2是一种很有前途的超导结势垒层材料，我们研究了在NdFeAsO薄膜上生长平整、光滑的CaF 2层的方法。当CaF 2层在800 ℃生长时，由于{111}面优先生长，表面非常粗糙.而在较低温度下生长CaF 2，并在800 ℃原位退火30 min后，小平面消失，得到表面光滑的CaF 2层。在高温下生长CaF 2时，观察到了氟从CaF 2向NdFeAsO的扩散，但降低生长温度至400 ℃时，氟的扩散被抑制。
We studied the method to grow a smooth and flat CaF 2 layer on NdFeAsO thin films since CaF 2 is a promising candidate material for the barrier layer of a superconducting junction. When the CaF 2 layer was grown at 800 C, the surface was very rough because {111} facets had grown preferentially. However, when CaF 2 was grown at lower temperatures and post-annealed in situ at 800 C for 30 min the facets were eliminated and a CaF 2 layer with a smooth surface was obtained. Fluorine diffusing from CaF 2 into NdFeAsO was observed when CaF 2 was grown at high temperatures, but the diffusion was suppressed by lowering the growth temperature to 400 C.