Low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs)
Low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs)
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基于低相位噪声 AlGaN/GaN FET 的压控振荡器 (VCO)
DOI：
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发表时间：
2001
影响因子：
3
通讯作者：
J. Shealy
中科院分区：
文献类型：
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作者：
J. Shealy;Joseph A. Smart;J. Shealy
首次报道了AlGaN/GaN HEMT基压控振荡器（VCO）。使用分布式网络实现的变容二极管调谐振荡器在6 GHz下振荡，具有高输出功率（0.5 W）、低相位噪声（100 kHz偏移时为-92 dBc/Hz SSB噪声）和高调谐带宽（10%）。在6 GHz时，AlGaN/GaN FET的相位噪声与GaAs FET和GaAs HBT的相位噪声进行了比较，表明AlGaN/GaN FET的单边带噪声与GaAs FET相当。这些结果表明，高功率AlGaN/GaN基VCO可用于简化通信无线电中的线路，同时提高无线电的整体效率。
The first report of AlGaN/GaN HEMT-based voltage controlled oscillators (VCOs) is presented. Varactor-tuned oscillators implemented using distributed networks oscillate at 6 GHz with high output power (0.5 W), low-phase noise (-92 dBc/Hz SSB noise at 100 kHz offset), and high-tuning bandwidth (10%). The measured phase noise of AlGaN/GaN FETs is compared to the phase noise of GaAs FET and GaAs HBTs at 6 GHz, indicating the AlGaN/GaN FET exhibits equivalent SSB noise to GaAs FETs. These results indicate high power AlGaN/GaN-based VCOs may be used to simplify the line up in a communication radio, while improving the overall efficiency of the radio.